au.\*:("COLVARD, C")
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OBSERVATION OF FOLDED ACOUSTIC PHONONS IN A SEMICONDUCTOR SUPERLATTICECOLVARD C; MERLIN R; KLEIN MV et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 4; PP. 298-301; BIBL. 17 REF.Article
Excitonic behavior in pseudomorphic InGaAs/(Al,Ga)As quantum wells grown by molecular-beam epitaxyACKLEY, D. E; LEE, H; COLVARD, C et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2746-2749, issn 0021-8979Article
RAMAN SCATTERING IN SUPERLATTICES: ANISOTROPY OF POLAR PHONONSMERLIN R; COLVARD C; KLEIN MV et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 43-45; BIBL. 25 REF.Article
Magnetic field induced quenching of excitons in modulation doped InGaAs quantum wellsCHEN, W; FRITZE, M; FU, Q et al.Surface science. 1990, Vol 228, Num 1-3, pp 318-321, issn 0039-6028Conference Paper
Well-resolved higher excited states of the light- and heavy-hole free excitons in a 225-Å AlxGa1-xAs-GaAs multi-quantum-well structureREYNOLDS, D. C; BAJAJ, K. K; LEAK, C et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 6, pp 3117-3119, issn 0163-1829Article
Interaction of magnetoexcitons and two-dimensional electron gas int the quantum hall regimeCHEN, W; FRITZE, M; NURMIKKO, A. V et al.Physical review letters. 1990, Vol 64, Num 20, pp 2434-2437, issn 0031-9007Article
Design and process development of a novel multi-wafer OMVPE reactor for growing very uniform GaAs and AlGaAs epitaxial layersRONG-TING HUANG; KASEMSET, D; NOURI, N et al.Journal of electronic materials. 1989, Vol 18, Num 5, pp 603-609, issn 0361-5235, 7 p.Article